Samsung M471B5273EB0-CK0 4GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Crucial Technology CB8GS2666.C8ET 8GB

需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 40

左右 -3% 更低的延时
更快的读取速度，GB/s

14 12.3

测试中的平均数值
更快的写入速度，GB/s

9.1 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CB8GS2666.C8ET 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 39
读取速度，GB/s

12.3 14.0
写入速度，GB/s

8.9 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 2221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-4266C19-8GTZKW 8GB

G Skill Intl F4-4266C19-8GTZKW 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Essencore Limited KD48GU880-32A160U 8GB

Essencore Limited KD48GU880-32A160U 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB