Samsung M471B5273EB0-CK0 4GB vs Crucial Technology CT16G4DFD8213.M16FA 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Crucial Technology CT16G4DFD8213.M16FA 16GB

Crucial Technology CT16G4DFD8213.M16FA 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Crucial Technology CT16G4DFD8213.M16FA 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.M16FA 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 -60% 更低的延时
更快的读取速度，GB/s

16.2 12.3

测试中的平均数值
更快的写入速度，GB/s

11.3 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT16G4DFD8213.M16FA 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 25
读取速度，GB/s

12.3 16.2
写入速度，GB/s

8.9 11.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2847

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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EVGA 8GX-D4-2800-MR 8GB

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Kingston KVR16N11/8-SP 8GB

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G Skill Intl F4-2400C17-8GSXK 8GB

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Crucial Technology BLS8G4S240FSD.M16FAD 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Crucial Technology CT8G4SFRA32A.M4FE 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Patriot Memory (PDP Systems) 2400 CL11 Series 8GB

Patriot Memory (PDP Systems) 2400 CL11 Series 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston 9965684-013.A00G 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Apacer Technology 78.CAGR4.40C0B 8GB

Apacer Technology 78.CAGR4.40C0B 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

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Kingston 9905622-025.A01G 4GB