Samsung M471B5273EB0-CK0 4GB vs Kingston HP26D4S9D8MJ-16 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Kingston HP26D4S9D8MJ-16 16GB

Kingston HP26D4S9D8MJ-16 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 119

左右 66% 更低的延时
更快的读取速度，GB/s

12.3 1.8

测试中的平均数值
更快的写入速度，GB/s

8.9 2.0

测试中的平均数值

Kingston HP26D4S9D8MJ-16 16GB

需要考虑的原因
Kingston HP26D4S9D8MJ-16 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Kingston HP26D4S9D8MJ-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 119
读取速度，GB/s

12.3 1.8
写入速度，GB/s

8.9 2.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Chun Well Technology Holding Limited D4U0826190B 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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SK Hynix HMAA2GU6CJR8N-XN 16GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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G Skill Intl F4-2666C16-8GRB 8GB

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AMD R5S38G1601U2S 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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A-DATA Technology AM2P32NC8W1-BCFS 8GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

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Corsair CMT16GX4M2C3466C16 8GB

Corsair CMT16GX4M2C3466C16 8GB