Samsung M471B5273EB0-CK0 4GB vs Kingston HP26D4S9S1ME-4 4GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 99

左右 60% 更低的延时
更快的写入速度，GB/s

8.9 6.4

测试中的平均数值

Kingston HP26D4S9S1ME-4 4GB

需要考虑的原因
Kingston HP26D4S9S1ME-4 4GB

报告一个错误

更快的读取速度，GB/s

14.4 12.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Kingston HP26D4S9S1ME-4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 99
读取速度，GB/s

12.3 14.4
写入速度，GB/s

8.9 6.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 1386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW16GX4M1D3000C16 16GB

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Samsung M378A2K43EB1-CWE 16GB

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Crucial Technology CT16G4DFRA32A.C8FB 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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Apacer Technology GD2.111881.002 4GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Corsair CMR32GX4M4D3000C16 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

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Crucial Technology CT16G4DFD824A.C16FHD 16GB

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Dust Leopard DDR4-2400 C17 8GB 8GB