Samsung M471B5273EB0-CK0 4GB vs Lexar Co Limited LD4AU016G-H2666G 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Lexar Co Limited LD4AU016G-H2666G 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H2666G 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

16.9 12.3

测试中的平均数值
更快的写入速度，GB/s

11.1 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Lexar Co Limited LD4AU016G-H2666G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

12.3 16.9
写入速度，GB/s

8.9 11.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 3167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA451U6AFR8N-TF 4GB

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Corsair CMT64GX4M4K3600C18 16GB

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Apacer Technology 78.CAGPW.40C0B 8GB

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Maxsun MSD44G24Q3 4GB

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Gloway International (HK) STK4U2400D17041C 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Micron Technology 9ASF1G72AZ-2G3B1 8GB

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