Samsung M471B5273EB0-CK0 4GB vs Micron Technology 8ATF1G64AZ-2G6B1 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G6B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 40

左右 -90% 更低的延时
更快的读取速度，GB/s

19.1 12.3

测试中的平均数值
更快的写入速度，GB/s

14.5 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 21
读取速度，GB/s

12.3 19.1
写入速度，GB/s

8.9 14.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 3427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-2400C15-8GRB 8GB

G Skill Intl F4-2400C15-8GRB 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston XJV223-MIE 16GB

Kingston XJV223-MIE 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9965657-011.A00G 16GB

Kingston 9965657-011.A00G 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Asgard VMA45UG-MEC1U2BQ2 8GB

Asgard VMA45UG-MEC1U2BQ2 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F5-6000U3636E16G 16GB

G Skill Intl F5-6000U3636E16G 16GB

Corsair CMT32GX5M2X6200C36 16GB

Corsair CMT32GX5M2X6200C36 16GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Corsair CMK32GX4M4A2666C15 8GB

Corsair CMK32GX4M4A2666C15 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB