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Samsung M471B5273EB0-CK0 4GB
V-GEN D4H8GL32A8TS 8GB

Samsung M471B5273EB0-CK0 4GB vs V-GEN D4H8GL32A8TS 8GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
V-GEN D4H8GL32A8TS 8GB 需要考虑的原因
V-GEN D4H8GL32A8TS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
V-GEN D4H8GL32A8TS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 40
  • 读取速度，GB/s
    12.3 left arrow 17.5
  • 写入速度，GB/s
    8.9 left arrow 9.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 2462

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

V-GEN D4H8GL32A8TS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Mushkin MRA4S293MMMF32G 32GB
Mushkin MRA4S293MMMF32G 32GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
V-GEN D4H8GL32A8TS 8GB
V-GEN D4H8GL32A8TS 8GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-4000C17-8GTRS 8GB
G Skill Intl F4-4000C17-8GTRS 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM