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Samsung M471B5673FH0-CF8 2GB
Corsair CMU32GX4M2A2666C16 16GB

Samsung M471B5673FH0-CF8 2GB vs Corsair CMU32GX4M2A2666C16 16GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Corsair CMU32GX4M2A2666C16 16GB

Corsair CMU32GX4M2A2666C16 16GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Corsair CMU32GX4M2A2666C16 16GB 需要考虑的原因
Corsair CMU32GX4M2A2666C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Corsair CMU32GX4M2A2666C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 29
  • 读取速度，GB/s
    10.6 left arrow 17.3
  • 写入速度，GB/s
    6.8 left arrow 13.5
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3397

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Corsair CMU32GX4M2A2666C16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMU32GX4M2A2666C16 16GB
Corsair CMU32GX4M2A2666C16 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3600C16-8GTZNC 8GB
G Skill Intl F4-3600C16-8GTZNC 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Mushkin MRB4U300GJJM16G 16GB
Mushkin MRB4U300GJJM16G 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMSX16GX4M2A3000C16 8GB
Corsair CMSX16GX4M2A3000C16 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-4266C17-8GTZRB 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Teclast TLD416G26A30 16GB
Teclast TLD416G26A30 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M471A1A43CB1-CRC 8GB
Samsung M471A1A43CB1-CRC 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Corsair CMK128GX4M8A2666C16 16GB
Corsair CMK128GX4M8A2666C16 16GB
内存RAM