Samsung M471B5673FH0-CF8 2GB vs Crucial Technology CT16G4DFD832A.C16FP 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Crucial Technology CT16G4DFD832A.C16FP 16GB

Crucial Technology CT16G4DFD832A.C16FP 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 34

左右 12% 更低的延时

Crucial Technology CT16G4DFD832A.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4DFD832A.C16FP 16GB

报告一个错误

更快的读取速度，GB/s

17.9 10.6

测试中的平均数值
更快的写入速度，GB/s

14.5 6.8

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT16G4DFD832A.C16FP 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 34
读取速度，GB/s

10.6 17.9
写入速度，GB/s

6.8 14.5
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1479 3401

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

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InnoDisk Corporation M4S0-8GSSOCIK 8GB

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Crucial Technology CT8G4SFS824A.C8FBR1 8GB