Samsung M471B5673FH0-CF8 2GB vs Essencore Limited IM48GU48N21-FFFHM 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Essencore Limited IM48GU48N21-FFFHM 8GB

Essencore Limited IM48GU48N21-FFFHM 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 3% 更低的延时

Essencore Limited IM48GU48N21-FFFHM 8GB

需要考虑的原因
Essencore Limited IM48GU48N21-FFFHM 8GB

报告一个错误

更快的读取速度，GB/s

12.9 10.6

测试中的平均数值
更快的写入速度，GB/s

9.1 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Essencore Limited IM48GU48N21-FFFHM 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 31
读取速度，GB/s

10.6 12.9
写入速度，GB/s

6.8 9.1
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 2190

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P26KC8T1-BPXS 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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SK Hynix HMA82GU6CJR8N-VK 16GB

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AMD R538G1601U2S-UO 8GB

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

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Crucial Technology BL16G36C16U4BL.M16FE 16GB

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Corsair CMT32GX4M2K4000C19 16GB

Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

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AMD R948G2806U2S 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston KHX3333C17D4/4GX 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMK16GX4M2B4266C19 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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Crucial Technology BL8G30C15U4BL.M8FE1 8GB

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Kingston 99U5471-056.A00LF 8GB

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Kingston KHX2133C13S4/16G 16GB