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Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB

Samsung M471B5673FH0-CF8 2GB vs G Skill Intl F4-3200C15-16GTZSW 16GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 31
    左右 3% 更低的延时
G Skill Intl F4-3200C15-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3200C15-16GTZSW 16GB
报告一个错误
  • 更快的读取速度，GB/s
    11.8 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 31
  • 读取速度，GB/s
    10.6 left arrow 11.8
  • 写入速度，GB/s
    6.8 left arrow 10.0
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2605

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

G Skill Intl F4-3200C15-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB
G Skill Intl F4-3200C15-16GTZSW 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9965639-002.A01G 8GB
Kingston 9965639-002.A01G 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Kingston KF2666C15S4/8G 8GB
Kingston KF2666C15S4/8G 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Kingston XN205T-HYD2 16GB
Kingston XN205T-HYD2 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin 99[2/7/4]200[F/T] 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Corsair CMK16GX4M2B3333C16 8GB
Corsair CMK16GX4M2B3333C16 8GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Corsair CMK64GX4M2D3600C18 32GB
Corsair CMK64GX4M2D3600C18 32GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston 9905622-055.A00G 4GB
Kingston 9905622-055.A00G 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Golden Empire CL16-18-18 D4-3000 16GB
Golden Empire CL16-18-18 D4-3000 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
内存RAM