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Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3600C18-32GTZN 32GB

Samsung M471B5673FH0-CF8 2GB vs G Skill Intl F4-3600C18-32GTZN 32GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
G Skill Intl F4-3600C18-32GTZN 32GB

G Skill Intl F4-3600C18-32GTZN 32GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
G Skill Intl F4-3600C18-32GTZN 32GB 需要考虑的原因
G Skill Intl F4-3600C18-32GTZN 32GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3600C18-32GTZN 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 30
  • 读取速度，GB/s
    10.6 left arrow 18.0
  • 写入速度，GB/s
    6.8 left arrow 15.5
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3694

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

G Skill Intl F4-3600C18-32GTZN 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3600C18-32GTZN 32GB
G Skill Intl F4-3600C18-32GTZN 32GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMK128GX4M8A2666C16 16GB
Corsair CMK128GX4M8A2666C16 16GB
内存RAM
Kingston 9965433-406.A00LF 8GB
Kingston 9965433-406.A00LF 8GB
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
G Skill Intl F4-3400C16-8GTZKW 8GB
G Skill Intl F4-3400C16-8GTZKW 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3200C16-16GTZN 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M4D3200C16 8GB
Corsair CMK32GX4M4D3200C16 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 76.C102G.D170B 8GB
Apacer Technology 76.C102G.D170B 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2400C15-16GFT 16GB
G Skill Intl F4-2400C15-16GFT 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMRX8GD3000C16R4D 8GB
Corsair CMRX8GD3000C16R4D 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
内存RAM