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EVGA 16G-D3-1600-MR 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

EVGA 16G-D3-1600-MR 8GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

总分
star star star star star
EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

差异 规格 评论

差异

EVGA 16G-D3-1600-MR 8GB 需要考虑的原因
EVGA 16G-D3-1600-MR 8GB
报告一个错误
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 33
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
EVGA 16G-D3-1600-MR 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 25
  • 读取速度，GB/s
    14.3 left arrow 17.3
  • 写入速度，GB/s
    9.1 left arrow 13.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2667 left arrow 2994

EVGA 16G-D3-1600-MR 8GB RAM的比较

Samsung M378B1G73BH0-CK0 8GB
EVGA 16G-D4-2666-MR 4GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D3-1600-MR 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3466C16-8GTZSK 8GB
G Skill Intl F4-3466C16-8GTZSK 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
内存RAM
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
内存RAM
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM