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Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Samsung M393B2G70BH0-CK0 16GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 54
    左右 -116% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 25
  • 读取速度，GB/s
    9.2 left arrow 17.3
  • 写入速度，GB/s
    8.1 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2994

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB RAM的比较

Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK64GX4M4K3733C17 16GB
Corsair CMK64GX4M4K3733C17 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMN16GX4M2Z3200C16 8GB
Corsair CMN16GX4M2Z3200C16 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Apacer Technology 78.C2GF2.AU00B 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
NSITEXE Inc Visenta 16GB
NSITEXE Inc Visenta 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Golden Empire CL18-20-20 D4-3200 8GB
Golden Empire CL18-20-20 D4-3200 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Apacer Technology GD2.1542WS.001 8GB
Apacer Technology GD2.1542WS.001 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
Corsair CMY16GX3M2A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
Corsair CMY16GX3M2A2400C11 8GB
Corsair CMY16GX3M2A2400C11 8GB
内存RAM