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Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB

Samsung M471B5673FH0-CF8 2GB vs G Skill Intl F4-3866C18-8GTZSW 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
G Skill Intl F4-3866C18-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 30
    左右 -67% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 18
  • 读取速度，GB/s
    10.6 left arrow 20.9
  • 写入速度，GB/s
    6.8 left arrow 17.0
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3668

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

G Skill Intl F4-3866C18-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston SMD4-S8G48HJ-26V 8GB
Kingston SMD4-S8G48HJ-26V 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Avant Technology J641GU42J5213ND 8GB
Avant Technology J641GU42J5213ND 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Panram International Corporation M424051 4GB
Panram International Corporation M424051 4GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Mushkin MR[ABC]4U320GJJM16G 16GB
Mushkin MR[ABC]4U320GJJM16G 16GB
内存RAM