Samsung M471B5673FH0-CF8 2GB vs Lexar Co Limited LD4AS008G-H2666GST 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Lexar Co Limited LD4AS008G-H2666GST 8GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Lexar Co Limited LD4AS008G-H2666GST 8GB

需要考虑的原因
Lexar Co Limited LD4AS008G-H2666GST 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 -3% 更低的延时
更快的读取速度，GB/s

15.8 10.6

测试中的平均数值
更快的写入速度，GB/s

10.2 6.8

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 29
读取速度，GB/s

10.6 15.8
写入速度，GB/s

6.8 10.2
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1479 2708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KF3733C19D4/16GX 16GB

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SK Hynix HMA82GU6JJR8N-VK 16GB

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Kingston 9965433-034.A00LF 4GB

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Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

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Essencore Limited IM4AGU88N26-GIIHMB 16GB

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Samsung 9905599-020.A00G 16GB

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Samsung M378A1G43DB0-CPB 8GB

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Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Avant Technology J641GU48J5213NG 8GB

Avant Technology J641GU48J5213NG 8GB