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Samsung M471B5673FH0-CF8 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB

Samsung M471B5673FH0-CF8 2GB vs Micron Technology 8R8F1G64HZ-2G3B1 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Micron Technology 8R8F1G64HZ-2G3B1 8GB 需要考虑的原因
Micron Technology 8R8F1G64HZ-2G3B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 -7% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 10.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 28
  • 读取速度，GB/s
    10.6 left arrow 14.8
  • 写入速度，GB/s
    6.8 left arrow 6.8
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2014

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM
Corsair CMY8GX3M2A2133C8 4GB
Corsair CMY8GX3M2A2133C8 4GB
G Skill Intl F4-2800C17-8GIS 8GB
G Skill Intl F4-2800C17-8GIS 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-2800C15-4GVRB 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMW64GX4M4Z2933C16 16GB
Corsair CMW64GX4M4Z2933C16 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Apacer Technology 78.CAGPW.40C0B 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Inmos + 256MB
Inmos + 256MB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston 9905624-023.A00G 8GB
Kingston 9905624-023.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR26D4U9S8HJ-8 8GB
Kingston ACR26D4U9S8HJ-8 8GB
内存RAM