Samsung M471B5673FH0-CF8 2GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 23% 更低的延时
更快的读取速度，GB/s

10.6 7.7

测试中的平均数值

Micron Technology 9ASF51272PZ-2G1AX 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G1AX 4GB

报告一个错误

更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 39
读取速度，GB/s

10.6 7.7
写入速度，GB/s

6.8 6.8
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 1768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905458-017.A01LF 4GB

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Crucial Technology CT8G4DFRA32A.C8FP 8GB

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Corsair CMV4GX3M1B1600C11 4GB

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Crucial Technology CT16G4DFRA32A.M16FR 16GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Transcend Information JM2666HSB-16G 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C14-32GVK 32GB

G Skill Intl F4-3200C14-32GVK 32GB

Kingston KF3200C16D4/16GX 16GB

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Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

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G Skill Intl F4-3200C15-8GTZ 8GB

G Skill Intl F4-3200C15-8GTZ 8GB