Samsung M471B5673FH0-CF8 2GB vs Mushkin MR[A/B]4U300JJJM16G 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Mushkin MR[A/B]4U300JJJM16G 16GB

需要考虑的原因
Mushkin MR[A/B]4U300JJJM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 -11% 更低的延时
更快的读取速度，GB/s

17.3 10.6

测试中的平均数值
更快的写入速度，GB/s

14.5 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Mushkin MR[A/B]4U300JJJM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 27
读取速度，GB/s

10.6 17.3
写入速度，GB/s

6.8 14.5
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 3528

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P32MCST2-BW4S 16GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Corsair CMR64GX4M4A2666C16 16GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Samsung M378B5773DH0-CH9 2GB

Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

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Kingston 9905678-041.A00G 4GB

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G Skill Intl F4-3733C17-16GTZR 16GB