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Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Samsung M471B5673FH0-CF8 2GB vs Patriot Memory (PDP Systems) 3400 C16 Series 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Patriot Memory (PDP Systems) 3400 C16 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 27
  • 读取速度，GB/s
    10.6 left arrow 18.2
  • 写入速度，GB/s
    6.8 left arrow 15.3
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3628

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Samsung M471B5673FH0-CF8 2GB
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Patriot Memory (PDP Systems) 3400 C16 Series 8GB
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内存RAM
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内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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