Samsung M471B5673FH0-CF8 2GB vs SpecTek Incorporated 16G2666CL19 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

SpecTek Incorporated 16G2666CL19 16GB

SpecTek Incorporated 16G2666CL19 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

SpecTek Incorporated 16G2666CL19 16GB

需要考虑的原因
SpecTek Incorporated 16G2666CL19 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 30

左右 -36% 更低的延时
更快的读取速度，GB/s

16.8 10.6

测试中的平均数值
更快的写入速度，GB/s

14.8 6.8

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

SpecTek Incorporated 16G2666CL19 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 22
读取速度，GB/s

10.6 16.8
写入速度，GB/s

6.8 14.8
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1479 3296

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Kingston 99U5474-022.A00LF 2GB

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Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston 9965600-012.A02G 16GB

Kingston 9965600-012.A02G 16GB

Kingston 99U5474-010.A00LF 2GB

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Crucial Technology CT8G4SFRA32A.M4FE 8GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Gloway International (HK) STK2133C15-8GB 8GB

Gloway International (HK) STK2133C15-8GB 8GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Crucial Technology BL8G24C16U4B.8FB 8GB

Crucial Technology BL8G24C16U4B.8FB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB