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Samsung M471B5673FH0-CF8 2GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Samsung M471B5673FH0-CF8 2GB vs Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 -7% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 28
  • 读取速度，GB/s
    10.6 left arrow 17.1
  • 写入速度，GB/s
    6.8 left arrow 15.3
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3480

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Corsair CMV8GX4M1L2400C16 8GB
Corsair CMV8GX4M1L2400C16 8GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK32GX4M2L3000C15 16GB
Corsair CMK32GX4M2L3000C15 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMR16GX4M2C 8GB
Corsair CMR16GX4M2C 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Heoriady HX2666DT8G-TD 8GB
Heoriady HX2666DT8G-TD 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Mushkin MRA4S300GJJM16G 16GB
Mushkin MRA4S300GJJM16G 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMU32GX4M2D3200C16 16GB
Corsair CMU32GX4M2D3200C16 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
SK Hynix HMA81GU7AFR8N-UH 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM