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Samsung M471B5673FH0-CH9 2GB
Crucial Technology CT8G4DFD824A.C16FE 8GB

Samsung M471B5673FH0-CH9 2GB vs Crucial Technology CT8G4DFD824A.C16FE 8GB

总分
star star star star star
Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology CT8G4DFD824A.C16FE 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CH9 2GB 需要考虑的原因
Samsung M471B5673FH0-CH9 2GB
报告一个错误
Crucial Technology CT8G4DFD824A.C16FE 8GB 需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 41
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CH9 2GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 27
  • 读取速度，GB/s
    11.1 left arrow 17.7
  • 写入速度，GB/s
    8.2 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1348 left arrow 3198

Samsung M471B5673FH0-CH9 2GB RAM的比较

Crucial Technology BLS8G3N169ES4.16FE 8GB
Elpida EBJ21UE8BFU0-DJ-F 2GB

Crucial Technology CT8G4DFD824A.C16FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
Samsung M471B5673FH0-CH9 2GB
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Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
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内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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