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Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5773DH0-CK0 2GB

Micron Technology 16KTF51264HZ-1G6M1 4GB vs Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

差异 规格 评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB
报告一个错误
Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 43
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 6.9
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5773DH0-CK0 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 27
  • 读取速度，GB/s
    10.6 left arrow 12.2
  • 写入速度，GB/s
    6.9 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1647 left arrow 1763

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Corsair CMN32GX4M2Z3200C16 16GB
Corsair CMN32GX4M2Z3200C16 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Avant Technology J642GU42J5213NF 16GB
Avant Technology J642GU42J5213NF 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
内存RAM
Kingston 9905474-019.A00LF 2GB
Kingston 9905474-019.A00LF 2GB
Kingston ACR24D4S7D8MB-16 16GB
Kingston ACR24D4S7D8MB-16 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
内存RAM
Kingston 39P5429-006.AO01 2GB
Kingston 39P5429-006.AO01 2GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM