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Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5773DH0-CK0 2GB

Micron Technology 16KTF51264HZ-1G6M1 4GB vs Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

差异 规格 评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB
报告一个错误
Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 43
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 6.9
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5773DH0-CK0 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 27
  • 读取速度，GB/s
    10.6 left arrow 12.2
  • 写入速度，GB/s
    6.9 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1647 left arrow 1763

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X16GD3200C16K2E 16GB
Corsair CM4X16GD3200C16K2E 16GB
内存RAM
Micron Technology 16KTF51264HZ-1G6M1 4GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4B16G4J2400A16K2-O 16GB
Corsair CM4B16G4J2400A16K2-O 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905744-005.A00G 16GB
Kingston 9905744-005.A00G 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston CBD32D4S2S1ME-8 8GB
Kingston CBD32D4S2S1ME-8 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905678-033.A00G 4GB
Kingston 9905678-033.A00G 4GB
内存RAM
Kingston KHX1600C10D3/4G 4GB
Kingston KHX1600C10D3/4G 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston HP32D4U8D8HC-16XR 16GB
Kingston HP32D4U8D8HC-16XR 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Kingston X0N6VG-HYD2 16GB
Kingston X0N6VG-HYD2 16GB
内存RAM