Samsung M471B5673FH0-CH9 2GB vs Corsair CMK16GX4M2Z2666C16 8GB

总分

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

总分

Corsair CMK16GX4M2Z2666C16 8GB

Corsair CMK16GX4M2Z2666C16 8GB

差异规格评论

差异

Samsung M471B5673FH0-CH9 2GB

需要考虑的原因
Samsung M471B5673FH0-CH9 2GB

报告一个错误

Corsair CMK16GX4M2Z2666C16 8GB

需要考虑的原因
Corsair CMK16GX4M2Z2666C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

16.4 11.1

测试中的平均数值
更快的写入速度，GB/s

12.8 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CH9 2GB

Corsair CMK16GX4M2Z2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

11.1 16.4
写入速度，GB/s

8.2 12.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1348 3080

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2Z2666C16 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology BLS4G4D240FSA.8FAD 4GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Kingston 9905665-011.A00G 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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G Skill Intl F4-4000C17-8GVKB 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

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