SK Hynix HMT325S6CFR8C-PB 2GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 -65% 更低的延时
更快的读取速度，GB/s

16.7 10.9

测试中的平均数值
更快的写入速度，GB/s

13.2 6.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 23
读取速度，GB/s

10.9 16.7
写入速度，GB/s

6.6 13.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1406 3025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

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Crucial Technology CT32G4SFD8266.C16FE 32GB

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AMD AE34G1601U1 4GB

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Samsung M386A4G40DM1-CRC 32GB

Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

Kingston 99U5663-003.A00G 16GB

Kingston 99U5663-003.A00G 16GB

Corsair CMZ32GX3M4A1600C9 8GB

Corsair CMZ32GX3M4A1600C9 8GB

Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston KHYXPX-HYJ 8GB

Kingston KHYXPX-HYJ 8GB