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SK Hynix HYMP512U64CP8-Y5 1GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

SK Hynix HYMP512U64CP8-Y5 1GB vs Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

总分
star star star star star
SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

差异 规格 评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB 需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.7
    测试中的平均数值
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 63
    左右 -186% 更低的延时
  • 更快的写入速度，GB/s
    13.7 left arrow 1,583.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP512U64CP8-Y5 1GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 22
  • 读取速度，GB/s
    3,895.6 left arrow 17.7
  • 写入速度，GB/s
    1,583.7 left arrow 13.7
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    639 left arrow 3066

SK Hynix HYMP512U64CP8-Y5 1GB RAM的比较

Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology NT1GT64U8HB0BY-3C 1GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
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内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
EVGA 16G-D4-2800-MR 4GB
EVGA 16G-D4-2800-MR 4GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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DSL Memory D4SS1G082SH21A-B 16GB
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G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F3-1600C11-4GIS 4GB
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内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
Apacer Technology 78.C1GET.9K10C 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
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Samsung M471B5173EB0-YK0 4GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Corsair CMR16GX4M2F4000C19 8GB
内存RAM
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Ramaxel Technology RMR5030ME68F9F1600 4GB
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Kingston CBD24D4S7S8ME-8 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
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G Skill Intl F4-3300C16-4GRKD 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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内存RAM
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Kingston XK2M26-MIE-NX 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Corsair CM4B16G4J2400A16K2-O 16GB
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