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Samsung M471B5673FH0-CH9 2GB
Panram International Corporation PUD42133C138G4NJK 8GB

Samsung M471B5673FH0-CH9 2GB vs Panram International Corporation PUD42133C138G4NJK 8GB

总分
star star star star star
Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

总分
star star star star star
Panram International Corporation PUD42133C138G4NJK 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CH9 2GB 需要考虑的原因
Samsung M471B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 74
    左右 45% 更低的延时
Panram International Corporation PUD42133C138G4NJK 8GB 需要考虑的原因
Panram International Corporation PUD42133C138G4NJK 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CH9 2GB
Panram International Corporation PUD42133C138G4NJK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 74
  • 读取速度，GB/s
    11.1 left arrow 14.9
  • 写入速度，GB/s
    8.2 left arrow 9.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1348 left arrow 1925

Samsung M471B5673FH0-CH9 2GB RAM的比较

Crucial Technology BLS8G3N169ES4.16FE 8GB
Elpida EBJ21UE8BFU0-DJ-F 2GB

Panram International Corporation PUD42133C138G4NJK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471B5673FH0-CH9 2GB
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Panram International Corporation PUD42133C138G4NJK 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM
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内存RAM
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Crucial Technology CT16G4DFD824A.M16FH 16GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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