Samsung M471B5674QH0-YK0 2GB vs A-DATA Technology DDR4 2400 2OZ 8GB

总分

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分

A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

差异规格评论

差异

Samsung M471B5674QH0-YK0 2GB

需要考虑的原因
Samsung M471B5674QH0-YK0 2GB

报告一个错误

A-DATA Technology DDR4 2400 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 2400 2OZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更快的读取速度，GB/s

15.8 7.2

测试中的平均数值
更快的写入速度，GB/s

11.8 3.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5674QH0-YK0 2GB

A-DATA Technology DDR4 2400 2OZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

7.2 15.8
写入速度，GB/s

3.0 11.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

915 2917

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-GEN D4H16GS24A8 16GB

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Samsung 1600 CL10 Series 8GB

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Micron Technology 16ATF2G64HZ-2G3E2 16GB

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A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

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SK Hynix DDR2 800 2G 2GB

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V-Color Technology Inc. TL48G26S8KRRGB16 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

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SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Kingston 9905701-018.A00G 16GB

Kingston 9905701-018.A00G 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB