Samsung M471B5674QH0-YK0 2GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB

总分

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

差异规格评论

差异

Samsung M471B5674QH0-YK0 2GB

需要考虑的原因
Samsung M471B5674QH0-YK0 2GB

报告一个错误

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

需要考虑的原因
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 -27% 更低的延时
更快的读取速度，GB/s

11.1 7.2

测试中的平均数值
更快的写入速度，GB/s

6.1 3.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5674QH0-YK0 2GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 30
读取速度，GB/s

7.2 11.1
写入速度，GB/s

3.0 6.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

915 1254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-4000C19-4GVK 4GB

G Skill Intl F4-4000C19-4GVK 4GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

G Skill Intl F4-2800C18-16GRS 16GB

G Skill Intl F4-2800C18-16GRS 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFS8213.M8FH 8GB

Crucial Technology CT8G4DFS8213.M8FH 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB