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Samsung M471B5674QH0-YK0 2GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Samsung M471B5674QH0-YK0 2GB vs Crucial Technology BL8G36C16U4BL.M8FE1 8GB

总分
star star star star star
Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分
star star star star star
Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

差异 规格 评论

差异

Samsung M471B5674QH0-YK0 2GB 需要考虑的原因
Samsung M471B5674QH0-YK0 2GB
报告一个错误
Crucial Technology BL8G36C16U4BL.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 38
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 7.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 3.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5674QH0-YK0 2GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 26
  • 读取速度，GB/s
    7.2 left arrow 19.3
  • 写入速度，GB/s
    3.0 left arrow 16.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    915 left arrow 3733

Samsung M471B5674QH0-YK0 2GB RAM的比较

Samsung M471B5773DH0-YK0 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung 1600 CL10 Series 8GB
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Avant Technology F641GU67F9333G 8GB
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Micron Technology 8ATF1G64HZ-2G3E2 8GB
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Corsair CMY8GX3M2A2666C10 4GB
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Corsair CMV16GX4M1A2666C18 16GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
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Corsair CMT16GX4M2C3200C16 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Corsair CMK8GX4M1E3200C16 8GB
Corsair CMK8GX4M1E3200C16 8GB
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Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
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G Skill Intl F4-4133C19-8GTZRF 8GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Corsair CMT32GX4M2C3600C18 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
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Kingston 9905734-003.A00G 32GB
内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
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SK Hynix HMA82GS6CJR8N-VK 16GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Kingston 9965669-008.A03G 16GB
内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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G Skill Intl F4-3000C14-16GTZ 16GB
内存RAM
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Samsung M378B5773DH0-CH9 2GB
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Kingston 9965600-012.A02G 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
内存RAM