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Samsung M471B5674QH0-YK0 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Samsung M471B5674QH0-YK0 2GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

总分
star star star star star
Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

差异 规格 评论

差异

Samsung M471B5674QH0-YK0 2GB 需要考虑的原因
Samsung M471B5674QH0-YK0 2GB
报告一个错误
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 38
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 7.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 3.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5674QH0-YK0 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 26
  • 读取速度，GB/s
    7.2 left arrow 15.5
  • 写入速度，GB/s
    3.0 left arrow 10.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    915 left arrow 2486

Samsung M471B5674QH0-YK0 2GB RAM的比较

Samsung M471B5773DH0-YK0 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KHX3000C16D4/32GX 32GB
Kingston KHX3000C16D4/32GX 32GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMD32GX4M4B3733C17 8GB
Corsair CMD32GX4M4B3733C17 8GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MN5 2GB
Kingmax Semiconductor KLDE88F-B8MN5 2GB
Corsair CMK64GX4M4B3333C16 16GB
Corsair CMK64GX4M4B3333C16 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-32GVK 32GB
G Skill Intl F4-3200C16-32GVK 32GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965604-027.D00G 8GB
Kingston 9965604-027.D00G 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Panram International Corporation PUD42133C138G4NJK 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Kingston KHX3466C19D4/16G 16GB
Kingston KHX3466C19D4/16G 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905711-038.A00G 8GB
Kingston 9905711-038.A00G 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMK8GX4M1D3000C16 8GB
Corsair CMK8GX4M1D3000C16 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMA84GR7JJR4N-VK 32GB
SK Hynix HMA84GR7JJR4N-VK 32GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Apacer Technology 78.D1GS7.B7B0B 16GB
Apacer Technology 78.D1GS7.B7B0B 16GB
内存RAM