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Samsung M471B5773DH0-CK0 2GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Samsung M471B5773DH0-CK0 2GB vs Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

差异 规格 评论

差异

Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 25% 更低的延时
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.1 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CK0 2GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 36
  • 读取速度，GB/s
    12.2 left arrow 17.1
  • 写入速度，GB/s
    7.8 left arrow 11.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1763 left arrow 3009

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
内存RAM
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Essencore Limited KD4AGU880-34A170X 16GB
Essencore Limited KD4AGU880-34A170X 16GB
内存RAM
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
V-Color Technology Inc. TN416G26D819-SB 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM
Kingston 99U5471-025.A00LF 4GB
Kingston 99U5471-025.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
内存RAM