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PNY Electronics PNY 2GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
比较
PNY Electronics PNY 2GB vs Micron Technology 18ASF1G72PDZ-2G6B1 8GB
总分
PNY Electronics PNY 2GB
总分
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
30
左右 10% 更低的延时
更快的读取速度,GB/s
13.8
11.2
测试中的平均数值
更快的写入速度,GB/s
8.4
7.9
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
报告一个错误
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
30
读取速度,GB/s
13.8
11.2
写入速度,GB/s
8.4
7.9
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2274
2266
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-8GVR 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMK64GX4M2D3000C16 32GB
Hexon Technology Pte Ltd HEXON 1GB
DSL Memory CIR-W4SUSS2408G 8GB
Samsung M393B1G70BH0-CK0 8GB
AMD R748G2400U2S-UO 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Samsung M471A1K43CB1-CRC 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
DSL Memory CIR-W4SUSS2408G 8GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston KCRXJ6-MIE 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
Corsair CMK32GX4M2A2666C16 16GB
G Skill Intl F4-3200C14-16GFX 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-4000C18-8GTZR 8GB
报告一个错误
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Bug description
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