Samsung M471B5773CHS-CF8 2GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB

总分

Samsung M471B5773CHS-CF8 2GB

Samsung M471B5773CHS-CF8 2GB

总分

Nanya Technology NT2GC64B88B0NS-CG 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

差异规格评论

差异

Samsung M471B5773CHS-CF8 2GB

需要考虑的原因
Samsung M471B5773CHS-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 43

左右 33% 更低的延时

Nanya Technology NT2GC64B88B0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B88B0NS-CG 2GB

报告一个错误

更快的读取速度，GB/s

11.1 5.7

测试中的平均数值
更快的写入速度，GB/s

7.3 3.0

测试中的平均数值
更高的内存带宽，mbps

10600 8500

左右 1.25 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773CHS-CF8 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

29 43
读取速度，GB/s

5.7 11.1
写入速度，GB/s

3.0 7.3
内存带宽，mbps

8500 10600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

7-7-7-20 / 1066 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

609 1357

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin MR[ABC]4U360JNNM16G 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Samsung M471B5773CHS-CF8 2GB

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Kingston KHX1866C9D3/8GX 8GB

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Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMK32GX4M2D3000C16 16GB

Corsair CMK32GX4M2D3000C16 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Corsair CMD64GX4M4C3200C16 16GB

Corsair CMD64GX4M4C3200C16 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB