Samsung M471B5773DH0-CH9 2GB vs Corsair CM4B8G2J2400A14K 8GB

总分

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分

Corsair CM4B8G2J2400A14K 8GB

Corsair CM4B8G2J2400A14K 8GB

差异规格评论

差异

Samsung M471B5773DH0-CH9 2GB

需要考虑的原因
Samsung M471B5773DH0-CH9 2GB

报告一个错误

Corsair CM4B8G2J2400A14K 8GB

需要考虑的原因
Corsair CM4B8G2J2400A14K 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 43

左右 -79% 更低的延时
更快的读取速度，GB/s

16.4 11

测试中的平均数值
更快的写入速度，GB/s

11.8 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CH9 2GB

Corsair CM4B8G2J2400A14K 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 24
读取速度，GB/s

11.0 16.4
写入速度，GB/s

7.2 11.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1393 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-002.A00LF 2GB

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Apacer Technology 78.CAGPP.ARC0B 8GB

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Crucial Technology CT16G4DFD8266.M16FJ 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Panram International Corporation D4U2666P-8G 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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G Skill Intl F5-6400J3239G16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

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Kingston 9905630-007.A00G 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB