Samsung M471B5773DH0-CH9 2GB vs Crucial Technology BLS8G4D30BESBK.8FD 8GB

总分

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

差异规格评论

差异

Samsung M471B5773DH0-CH9 2GB

需要考虑的原因
Samsung M471B5773DH0-CH9 2GB

报告一个错误

Crucial Technology BLS8G4D30BESBK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D30BESBK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 43

左右 -48% 更低的延时
更快的读取速度，GB/s

17.9 11

测试中的平均数值
更快的写入速度，GB/s

13.4 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CH9 2GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 29
读取速度，GB/s

11.0 17.9
写入速度，GB/s

7.2 13.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1393 3311

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Zotac Technology Ltd OD48G32S816-ZHC 8GB

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Kingston ACR16D3LS1KBG/8G 8GB

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G Skill Intl F4-3200C15-16GVR 16GB

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Samsung M471B5773DH0-CH9 2GB

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Crucial Technology BLS8G4D30BESBK.8FD 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

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Kingston 9905403-038.A00LF 4GB

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Kingston HP37D4U1S8ME-8X 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

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Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB