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Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
比较
Samsung M471B5773DH0-CH9 2GB vs Crucial Technology BLT16G4D30BET4.C16FD 16GB
总分
Samsung M471B5773DH0-CH9 2GB
总分
Crucial Technology BLT16G4D30BET4.C16FD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5773DH0-CH9 2GB
报告一个错误
需要考虑的原因
Crucial Technology BLT16G4D30BET4.C16FD 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
43
左右 -39% 更低的延时
更快的读取速度,GB/s
16.8
11
测试中的平均数值
更快的写入速度,GB/s
13.8
7.2
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
31
读取速度,GB/s
11.0
16.8
写入速度,GB/s
7.2
13.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1393
3405
Samsung M471B5773DH0-CH9 2GB RAM的比较
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK16GX4M4A2800C16 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMK64GX4M2E3200C16 32GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3866C18-16GTZR 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Samsung M393A2K43BB1-CRC 16GB
Crucial Technology CT102464BF160B-16F 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK64GX4M4B3466C16 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Crucial Technology CT102464BA160B.M16 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Samsung M393B1K70CH0-YH9 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
报告一个错误
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Bug description
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