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Samsung M471B5773DH0-CH9 2GB
Kingmax Semiconductor GLAG43F-18---------- 8GB

Samsung M471B5773DH0-CH9 2GB vs Kingmax Semiconductor GLAG43F-18---------- 8GB

总分
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分
star star star star star
Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

差异 规格 评论

差异

Samsung M471B5773DH0-CH9 2GB 需要考虑的原因
Samsung M471B5773DH0-CH9 2GB
报告一个错误
Kingmax Semiconductor GLAG43F-18---------- 8GB 需要考虑的原因
Kingmax Semiconductor GLAG43F-18---------- 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 43
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CH9 2GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 40
  • 读取速度，GB/s
    11.0 left arrow 15.7
  • 写入速度，GB/s
    7.2 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1393 left arrow 2972

Samsung M471B5773DH0-CH9 2GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB

Kingmax Semiconductor GLAG43F-18---------- 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
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内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
G Skill Intl F4-2133C15-4GVR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
内存RAM
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Kingston 99U5474-022.A00LF 2GB
Maxsun MSD48G26Q3 8GB
Maxsun MSD48G26Q3 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
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Corsair CMU32GX4M2A2666C16 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M393A1G40EB1-CRC 8GB
Samsung M393A1G40EB1-CRC 8GB
内存RAM