Samsung M471B5773DH0-CH9 2GB vs SK Hynix HMT41GS6MFR8C-PB 8GB

总分

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分

SK Hynix HMT41GS6MFR8C-PB 8GB

SK Hynix HMT41GS6MFR8C-PB 8GB

差异规格评论

差异

Samsung M471B5773DH0-CH9 2GB

需要考虑的原因
Samsung M471B5773DH0-CH9 2GB

报告一个错误

SK Hynix HMT41GS6MFR8C-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6MFR8C-PB 8GB

报告一个错误

更快的读取速度，GB/s

13.2 11

测试中的平均数值
更快的写入速度，GB/s

8.4 7.2

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CH9 2GB

SK Hynix HMT41GS6MFR8C-PB 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

43 43
读取速度，GB/s

11.0 13.2
写入速度，GB/s

7.2 8.4
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1393 2185

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology BLS16G4D240FSC.16FAD 16GB

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Samsung M471B5773DH0-CH9 2GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Samsung M471A2K43CB1-CTCT 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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