Samsung M471B5773DH0-CK0 2GB vs Corsair CMR64GX4M4C3333C16 16GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分

Corsair CMR64GX4M4C3333C16 16GB

Corsair CMR64GX4M4C3333C16 16GB

差异规格评论

差异

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

Corsair CMR64GX4M4C3333C16 16GB

需要考虑的原因
Corsair CMR64GX4M4C3333C16 16GB

报告一个错误

更快的读取速度，GB/s

19.1 12.2

测试中的平均数值
更快的写入速度，GB/s

15.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CK0 2GB

Corsair CMR64GX4M4C3333C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

12.2 19.1
写入速度，GB/s

7.8 15.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1763 4053

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Kingston ACR21D4S15HAG/8G 8GB

Kingston ACR21D4S15HAG/8G 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

Corsair CMK32GX5M2B5600C36 16GB

Corsair CMK32GX5M2B5600C36 16GB

SK Hynix HMA82GU6AFR8N-TF 16GB

SK Hynix HMA82GU6AFR8N-TF 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9965600-005.A00G 16GB

Kingston 9965600-005.A00G 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston 9905665-021.A00G 4GB

Kingston 9905665-021.A00G 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston ASU21D4U5S1MB-4 4GB

Kingston ASU21D4U5S1MB-4 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMK128GX4M8B3000C16 16GB

Corsair CMK128GX4M8B3000C16 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB