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Samsung M471B5773DH0-CK0 2GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB

Samsung M471B5773DH0-CK0 2GB vs Micron Technology 16ATF2G64AZ-2G1B1 16GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

差异 规格 评论

差异

Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 13% 更低的延时
Micron Technology 16ATF2G64AZ-2G1B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G1B1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.1 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CK0 2GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 31
  • 读取速度，GB/s
    12.2 left arrow 14.1
  • 写入速度，GB/s
    7.8 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1763 left arrow 2640

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
EVGA 8GX-D4-3200-MR 8GB
EVGA 8GX-D4-3200-MR 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston K9CXF2-MIE 8GB
Kingston K9CXF2-MIE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
Kingston 99U5428-046.A00LF 4GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
内存RAM
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMT425S6AFR6A-PB 2GB
Transcend Information TS1GLH64V4H 8GB
Transcend Information TS1GLH64V4H 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Corsair CMSX64GX4M2A2933C19 32GB
Corsair CMSX64GX4M2A2933C19 32GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMW16GX4M2C3000C15 8GB
Corsair CMW16GX4M2C3000C15 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Panram International Corporation W4N2400PS-8G 8GB
Panram International Corporation W4N2400PS-8G 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM