Samsung M378T5663QZ3-CF7 2GB vs Micron Technology 9ASF1G72PZ-2G6D1 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Micron Technology 9ASF1G72PZ-2G6D1 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 11

测试中的平均数值

Micron Technology 9ASF1G72PZ-2G6D1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G6D1 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 56

左右 -81% 更低的延时
更快的写入速度，GB/s

8.4 1,813.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 31
读取速度，GB/s

4,387.7 11.0
写入速度，GB/s

1,813.5 8.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

693 2271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Essencore Limited KD44GU480-26N160T 4GB

Essencore Limited KD44GU480-26N160T 4GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C11-8GTXD 8GB

G Skill Intl F3-2666C11-8GTXD 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Kingston 9905702-027.A00G 8GB

Kingston 9905702-027.A00G 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Elpida EBE10UE8AFSA-8G-F 1GB

Elpida EBE10UE8AFSA-8G-F 1GB

Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB