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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Micron Technology 9ASF1G72PZ-2G6D1 8GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分
star star star star star
Micron Technology 9ASF1G72PZ-2G6D1 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

差异 规格 评论

差异

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 31
    左右 29% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.4
    测试中的平均数值
Micron Technology 9ASF1G72PZ-2G6D1 8GB 需要考虑的原因
Micron Technology 9ASF1G72PZ-2G6D1 8GB
报告一个错误

规格

完整的技术规格清单
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 31
  • 读取速度，GB/s
    17.7 left arrow 11.0
  • 写入速度，GB/s
    12.7 left arrow 8.4
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3075 left arrow 2271

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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