Samsung M471B5773DH0-CK0 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

差异规格评论

差异

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 27

左右 -42% 更低的延时
更快的读取速度，GB/s

18.7 12.2

测试中的平均数值
更快的写入速度，GB/s

14.2 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CK0 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 19
读取速度，GB/s

12.2 18.7
写入速度，GB/s

7.8 14.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1763 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFD824A.C16FADP 8GB

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Corsair CMK16GX4M2B3333C16 8GB

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AMD R5S38G1601U2S 8GB

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G Skill Intl F4-3300C16-4GRRD 4GB

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Micron Technology 8ATF1G64HZ-3G2J1 8GB

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Kingston 99U5471-012.A00LF 4GB

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Corsair CMD32GX4M4C3200C16-R 8GB

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Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

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Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

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Corsair CMK32GX4M2Z4000C18 16GB