RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
比较
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB
总分
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
总分
Micron Technology 4ATF1G64HZ-3G2B2 8GB
差异
规格
评论
差异
需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
报告一个错误
更快的写入速度,GB/s
13.6
11.9
测试中的平均数值
需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2B2 8GB
报告一个错误
低于PassMark测试中的延时,ns
39
46
左右 -18% 更低的延时
更快的读取速度,GB/s
16.1
14.2
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2 更高的带宽
规格
完整的技术规格清单
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
46
39
读取速度,GB/s
14.2
16.1
写入速度,GB/s
13.6
11.9
内存带宽,mbps
21300
25600
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2717
2782
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Kingston 9905403-061.A00LF 2GB
Corsair CM4X8GF2400Z16K4 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Samsung M4 70T2864QZ3-CE6 1GB
Samsung M378A1K43DB2-CVF 8GB
Kingston 9905403-500.A01LF 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Samsung M471B5173DB0-YK0 4GB
SK Hynix HMA82GU6DJR8N-WM 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3333C16-8GVR 8GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Kingston 9905700-011.A00G 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M471A1K43BB1-CRC 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
A-DATA Technology ADOVE1A0834E 1GB
AMD R744G2133U1S 4GB
Apacer Technology 78.01GA0.9K5 1GB
Samsung V-GeN D4S8GL32A8TL 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
报告一个错误
×
Bug description
Source link