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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M393A5143DB0-CRC 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Samsung M393A5143DB0-CRC 4GB

总分
star star star star star
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分
star star star star star
Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

差异 规格 评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB 需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 47
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Samsung M393A5143DB0-CRC 4GB 需要考虑的原因
Samsung M393A5143DB0-CRC 4GB
报告一个错误

规格

完整的技术规格清单
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M393A5143DB0-CRC 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 47
  • 读取速度，GB/s
    14.2 left arrow 10.0
  • 写入速度，GB/s
    13.6 left arrow 7.5
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2717 left arrow 2308

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M393A5143DB0-CRC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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