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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Crucial Technology BLS8G4D26BFSE.16FE 8GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

差异 规格 评论

差异

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 29
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 17.3
    测试中的平均数值
Crucial Technology BLS8G4D26BFSE.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FE 8GB
报告一个错误
  • 更快的写入速度，GB/s
    13.9 left arrow 12.7
    测试中的平均数值

规格

完整的技术规格清单
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 29
  • 读取速度，GB/s
    17.7 left arrow 17.3
  • 写入速度，GB/s
    12.7 left arrow 13.9
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3075 left arrow 3134

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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