SK Hynix DDR2 800 2G 2GB vs Corsair CMK16GX4M2Z3600C18 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Corsair CMK16GX4M2Z3600C18 8GB

Corsair CMK16GX4M2Z3600C18 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 18.2

测试中的平均数值

Corsair CMK16GX4M2Z3600C18 8GB

需要考虑的原因
Corsair CMK16GX4M2Z3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 77

左右 -175% 更低的延时
更快的写入速度，GB/s

15.4 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Corsair CMK16GX4M2Z3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 28
读取速度，GB/s

2,936.9 18.2
写入速度，GB/s

1,884.0 15.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 3503

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905713-004.A00G 4GB

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G Skill Intl F4-3333C16-16GTZ 16GB

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Micron Technology 8ATF1G64AZ-2G3A1 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston KF2933C17S4/32G 32GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3000C15-8GRBB 8GB

G Skill Intl F4-3000C15-8GRBB 8GB