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SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB

SK Hynix DDR2 800 2G 2GB vs Crucial Technology BLS8G4D240FSE.16FBR2 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15
    测试中的平均数值
Crucial Technology BLS8G4D240FSE.16FBR2 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 77
    左右 -133% 更低的延时
  • 更快的写入速度，GB/s
    11.0 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 33
  • 读取速度，GB/s
    2,936.9 left arrow 15.0
  • 写入速度，GB/s
    1,884.0 left arrow 11.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2637

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
SK Hynix MMA82GS6CJR8N-VK 16GB
SK Hynix MMA82GS6CJR8N-VK 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CMT32GX4M4C3200C16 8GB
Corsair CMT32GX4M4C3200C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Chun Well Technology Holding Limited D4U0836144B 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMV4GX4M1A2400C16 4GB
Corsair CMV4GX4M1A2400C16 4GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Corsair CMW16GX4M2K3600C16 8GB
Corsair CMW16GX4M2K3600C16 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Transcend Information JM2666HLB-16G 16GB
Transcend Information JM2666HLB-16G 16GB
内存RAM